dtm3a25p20nfdb datasheet number: ds38017 rev. 1 - 2 1 of 10 www.diodes.com january 201 6 ? diodes incorporated dtm 3 a 25 p20n fdb features ? combination of pnp low v ce(sat) tr ansistor and n - channel mosfet ? very low collector - emitter saturation voltage v ce(sat) ? high c ollector c urrent c apability i c and i cm ? high c ollector c urrent g ain (h fe ) at high i c ? p d up to 2.47w for powe r demanding applications ? totally lead - free & fully rohs c ompliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) mechanical data ? case: u - dfn2020 - 6 ( type b) ? ul flammability rating 94v - 0 ? case m aterial: m olded plastic. green m oldin g compound. ? moisture sen sitivity: level 1 per j - std - 020 ? terminals: finish - nipdau , solderable per mil - std - 202, method 208 ? weight: 0.00 7 grams (approximate) ordering information (note 4 ) pro duct marking reel size (inches) tape width (mm) quantity per reel dtm 3 a 25 p20nfdb - 7 1w1 7 8 3,000 notes: 1. no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com /quality/lead_free.htm l for more information about diodes incorporateds definitions of halogen - and antimony - free, "green" and lead - free. 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlo rine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http://www.diodes.com/products/packages.html. marking information 1 w1 = product t ype marking code y = year : 0~9 (last digit of the year) w = week : a~z : week 1~26; a~z : week 27~52 ; z represents week 52 and 53 x = a~z : internal code m = month (ex: 9 = september) 25v pnp l ow sat transistor with n - c hannel mosfet top view u - dfn2020 - 6 ( type b ) device symbol top view pin - out 1w1 ywx c g s e b d 1 6 c d e4
dtm3a25p20nfdb datasheet number: ds38017 rev. 1 - 2 2 of 10 www.diodes.com january 201 6 ? diodes incorporated dtm 3 a 25 p20n fdb bjt absolute maximum ratings ( @t a = + 25c , unless otherwise specified .) characteristic symbol value unit collector - base v oltage v cbo - 35 v collector - emitter voltage v ceo - 25 v emitter - base voltage v ebo - 7 v continuous collector current i c - 3 a peak pulse current i c m - 6 a base current i b - 5 00 ma mosfet absolute maximum ratings ( @t a = +25c, unless otherwise specified .) characteristic symbol value units drain - source voltage v dss 2 0 v gate - source voltage v gss 6 v continuous drain current (note 5 ) v gs = 10 v @t a = + 25c @t a = + 85 c i d 0.63 0.45 a puls ed drain current i dm 6 a thermal characteristics ( @t a = +25c, unless otherwise specified.) characteristic symbol value unit power dissipation (note s 5 & 7 ) p d 405 m w (note s 5 & 8 ) 510 (note s 6 & 7 ) 1 , 650 (note s 6 & 8 ) 2 , 470 therma l resista nce, junction to ambient (note s 5 & 7 ) r ? ja 308 c/w ? ? jl 18 c/w ? j, t stg - 55 to + 150 c esd ratings (note 10 ) characteristic symbol valu e unit jedec class electrostatic discharge C C ? notes: 5. for a device mounted with the exposed collector pads on minimum recommended pad layout that is on a single - sided 1.6mm fr4 pcb ; device is measured under still air conditions whilst operating in a steady - state. 6. same as note (5), except the device is mounted with the collector pad on 28mm x 28mm (8cm 2 ) 2 oz co pper. 7. for a dual device with one active d ie. 8. for dual device with 2 active die running at equal power. 9. thermal resistance from junction to solder - point (on the exposed collector pads). 10. refer to jedec specification jesd22 - a114 and jesd22 - a115.
dtm3a25p20nfdb datasheet number: ds38017 rev. 1 - 2 3 of 10 www.diodes.com january 201 6 ? diodes incorporated dtm 3 a 25 p20n fdb thermal characteristic s and derating information 100m 1 10 1m 10m 100m 1 10 see note 5 & 7 single pulse t amb =25c v ce(sat) limited 100s 1ms 10ms 100ms 1s dc safe operating area i c collector current (a) v ce collector-emitter voltage (v) 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 see note 6 & 8 see note 6 & 7 see note 5 & 7 see note 5 & 8 derating curve temperature (c) max power dissipation (w) 100 1m 10m 100m 1 10 100 1k 0 30 60 90 120 150 180 210 240 270 300 330 t amb =25c, see note 5 & 7 transient thermal impedance d=0.5 d=0.2 d=0.1 single pulse d=0.05 thermal resistance (c/w) pulse width (s) 100 1m 10m 100m 1 10 100 1k 0.1 1 10 100 single pulse t amb =25c, see note 5 & 7 pulse power dissipation pulse width (s) maximum power (w) 100 1m 10m 100m 1 10 100 1k 1 10 100 single pulse t amb =25c, see note 6 & 7 pulse power dissipation pulse width (s) maximum power (w) 100 1m 10m 100m 1 10 100 1k 0 10 20 30 40 50 60 70 80 t amb =25c, see note 6 & 7 transient thermal impedance d=0.5 d=0.2 d=0.1 single pulse d=0.05 thermal resistance (c/w) pulse width (s)
dtm3a25p20nfdb datasheet number: ds38017 rev. 1 - 2 4 of 10 www.diodes.com january 201 6 ? diodes incorporated dtm 3 a 25 p20n fdb typical electrical characteristics - bjt pnp (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition collector - base breakdown voltage b v cbo - 35 - 60 - v i c = - 100 a collector - e mitter breakdown voltage (note 11 ) b v ceo - 25 - 40 - v i c = - 10ma emitter - base breakdown voltage b v ebo - 7 - 8.4 - v i e = - 100 a collector cutoff current i cbo - <1 - 5 0 - 0.5 na a v cb = - 28 v v cb = - 28 v , t a = +100 c emitter cutoff current i ebo - <1 - 5 0 na v eb = - 5 .6 v collector emitter cutoff current i ces - - - 100 na v ce = - 32 v static forward current transfer ratio (note 11 ) h fe 2 00 1 30 1 00 25 320 230 180 50 500 - - - - i c = - 1 00 ma, v ce = - 2 v i c = - 1 a, v ce = - 2 v i c = - 2 a, v ce = - 2 v i c = - 6 a, v ce = - 2 v collector - emitter saturation voltage (note 11 ) v ce(sat) - - 85 - 229 - 1 5 0 - 3 50 mv i c = - 1 a, i b = - 1 00 ma i c = - 3 a, i b = - 30 0 ma base - emitter turn - on voltage (note 11 ) v be(on) - - 786 - 850 m v i c = - 1 a, v ce = - 5 v base - emitter saturatio n voltage (note 11 ) v be(sat) - - 895 - 1 , 000 m v i c = - 1 a, i b = - 100m a note : 11 . measured under pulsed conditions. pulse width 300 s. duty cycle 2% .
dtm3a25p20nfdb datasheet number: ds38017 rev. 1 - 2 5 of 10 www.diodes.com january 201 6 ? diodes incorporated dtm 3 a 25 p20n fdb typical electrical characteristics - bjt pnp (@ t a = +25c, unless otherwise specified.) 1m 10m 100m 1 1m 10m 100m 1 10m 100m 1 0.0 0.1 0.2 0.3 1m 10m 100m 1 10 0 100 200 300 400 500 1m 10m 100m 1 0.2 0.4 0.6 0.8 1.0 1.2 1m 10m 100m 1 0.2 0.4 0.6 0.8 1.0 1.2 10m 100m 1 10 0 20 40 60 80 100 120 140 160 180 i c /i b =50 v ce(sat) v i c tamb=25c i c /i b =20 i c /i b =100 i c /i b =10 - v ce(sat) (v) - i c collector current (a) 100c v be(sat) v i c i c /i b =10 150c 25c -55c - v ce(sat) (v) - i c collector current (a) 150c h fe v i c v ce =-2v -55c 25c 100c - i c collector current (a) 150c 25c v ce(sat) v i c i c /i b =10 100c -55c - v be(sat) (v) - i c collector current (a) 150c v be(on) v i c v ce =-2v 100c 25c -55c - v be(on) (v) - i c collector current (a) capacitance v voltage f = 1mhz cobo cibo capacitance (pf) - voltage(v) typical gain ( h fe )
dtm3a25p20nfdb datasheet number: ds38017 rev. 1 - 2 6 of 10 www.diodes.com january 201 6 ? diodes incorporated dtm 3 a 25 p20n fdb typical electrical characteristics C mos n - channel (@ t a = +25c, unless otherwise specified .) characteristic symbol min typ max unit test condition off characteristics (note 12 ) drain - source breakdown voltage bv dss 2 0 ? ? gs = 0v, i d = 250 a zero gate voltage drain current t j = + 25c i dss ? ? v ds = 20v, v gs = 0v gate - source leakag e i gss ? ? ? gs = ? ??? ds = 0v on characteristics (note 12 ) gate threshold voltage v gs(th) 0. 5 ? ds = v gs , i d = 250 a static drain - source on - resistance r ds (on) ? ? gs = 4.5v, i d = 600m a 0.4 0.5 v gs = 2 .5v, i d = 500m a 0.5 0.7 v gs = 1.8 v, i d = 3 5 0 m a forward transfer admittance y fs ? ? ds = 10 v, i d = 400m a diode forward voltage v sd ? gs = 0v, i d = 150ma dynamic characteristics (note 13) input capacitance c iss ? ? ds = 16v, v gs = 0v f = 1 .0mhz output capacitance c oss ? ? rss ? 5. 37 ? g ? ? ? gs = 4.5v, v ds = 10v, i d = 250ma gate - to - source charge q gs ? ? ? gd ? ? ? switching cha racteristics turn - on delay time t d(on) ? ? dd = 10v, v gs = 4.5 v, r l = 47 g = 10 d = 200ma rise time t r ? ? d(off) ? ? f ? ? ? ? notes: 12 . short duration pulse test used to minimize sel f - heating effect. 13 . guaranteed by design. not subject to production testing.
dtm3a25p20nfdb datasheet number: ds38017 rev. 1 - 2 7 of 10 www.diodes.com january 201 6 ? diodes incorporated dtm 3 a 25 p20n fdb typical electrical characteristics C mos n - channel (@ t a = +25c, unless otherwise specified.) 0 0.3 0.6 0.9 1.2 1.5 0 1 2 3 4 5 fig. 1 typical output characteristics v , drain-source voltage (v) ds i , d r a i n c u r r e n t ( a ) d v = 1.2v gs v = 1.5v gs v = 2.0v gs v = 2.5v gs v = 3.0v gs v = 4.5v gs v = 8.0v gs 0 0.3 0.6 0.9 1.2 1.5 0 0.5 1 1.5 2 2.5 3 fig. 2 typical transfer characteristics v , gate source voltage (v) gs i , d r a i n c u r r e n t ( a ) d v = 5v ds t = -55c a t = 25c a t = 125c a t = 150c a t = 85c a 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.3 0.6 0.9 1.2 1.5 fig. 3 typical on-resistance vs. drain current and gate voltage i , drain-source current (a) d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v = 1.8v gs v = 4.5v gs v = 2.5v gs 0 0.1 0.2 0.3 0.4 0.5 0.6 0 0.3 0.6 0.9 1.2 1.5 i , drain current (a) fig. 4 typical drain-source on-resistance vs. drain current and temperature d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs 0.5 0.7 0.9 1.1 1.3 1.5 1.7 fig. 5 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) v = 4.5v i = 1.0a gs d v = 2.5v i = 500ma gs d 0 0.2 0.4 0.6 0.8 fig. 6 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v = 4.5v i = 1.0a gs d v = 2.5v i = 500ma gs d
dtm3a25p20nfdb datasheet number: ds38017 rev. 1 - 2 8 of 10 www.diodes.com january 201 6 ? diodes incorporated dtm 3 a 25 p20n fdb 0 0.4 0.8 1.2 1.6 v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) fig. 7 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a i = 250a d 0.2 0.4 0.6 0.8 1.0 1.2 v , source-drain voltage (v) sd fig. 8 diode forward voltage vs. current 0 2 4 6 8 10 i , s o u r c e c u r r e n t ( a ) s t = 25c a 1 10 100 0 5 10 15 20 fig. 9 typical capacitance v , drain-source voltage (v) ds c , c a p a c i t a n c e ( p f ) c iss c oss c rss 1 10 100 1,000 0 4 8 12 16 20 fig. 10 typical drain-source leakage current vs. drain-source voltage v , drain-source voltage (v) ds i , d r a i n - s o u r c e l e a k a g e c u r r e n t ( n a ) d s s t = 25c a t = 85c a t = 125c a t = 150c a fig. 11 transient thermal response t , pulse duration time (s) 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 0.001 0.01 0.1 1 r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e t - t = p * r (t) duty cycle, d = t /t j a ja 12 ? r (t) = r(t) * ? ja r r = 486c/w ? ? ja ja p(pk) t 1 t 2 d = 0.7 d = 0.5 d = 0.3 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9 d = 0.1
dtm3a25p20nfdb datasheet number: ds38017 rev. 1 - 2 9 of 10 www.diodes.com january 201 6 ? diodes incorporated dtm 3 a 25 p20n fdb package outline dimensions please see http://www.diodes.com/package - outlines.html for the latest version. suggested pad layout please see h ttp://www.diodes.com/package - outlines.html for the latest version. u - dfn2020 - 6 type b dim min max typ a 0.545 0.605 0.575 a1 0.00 0.05 0.02 a3 - - 0.13 b 0.20 0.30 0.25 d 1.95 2.075 2.00 d2 0.50 0.70 0.60 e - - 0.65 e 1.95 2.075 2.00 e2 0.90 1.10 1.00 k - - 0.45 l 0.25 0.35 0.30 z - - 0.225 z1 - - 0.175 all dimensions in mm dimensions value (in mm) c 0.650 g 0.150 g1 0.450 x 0.350 x1 0.600 x2 1.650 y 0.500 y1 1.000 y2 2.300 d2 r0.150 a a1 a3 seating plane e d2 e2 b (pin #1 id) e l d k z1 z1 z x2 c y2 y1(2x) g1 x y g x1(2x)
dtm3a25p20nfdb datasheet number: ds38017 rev. 1 - 2 10 of 10 www.diodes.com january 201 6 ? diodes incorporated dtm 3 a 25 p20n fdb important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability a nd fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further no tice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such appli cations shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose product s are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or i ndirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product name s and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and dete rminative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or system s without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with in structions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorpora ted and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 6 , diodes incorporated www.diodes.com
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